| 简介 |
A process for coating or modifying a substrate using plasma-enhanced chemical vapor deposition (PECVD) is described in which a plasma is generated in a gaseous mixture containing at least 35 volume-percent nitrogen gas, at least 50 ppm of at least one gaseous silicon-containing compound, and up to a 1.5 : 1 volume ratio of at least one rare gas relative to nitrogen gas, the rare gas comprising at least 1 volume-percent helium gas, at least 1 volume-percent neon gas, or at least 3 volume-percent argon gas, each volume-percent based on the total volume of the gaseous mixture at 200C and 101 kPa pressure. This process is capable of producing coatings which are monolithic and substantially uniform at high deposition rates and/or low power density. The process is useful for making a surface modified coating such as an adhesion promoter or an antifog coating; an optical coating such as a reflective or antireflective coating, a light spectrum management coating, or UV protection coating; a chemical resistant coating; an abrasion-resistant coating; or a gas barrier coating. Examples of potential end use applications include online coating of extruded plastic film, sheet, laminates and molded articles useful in architectural glazing, glazing panels, solar collectors, appliances, optical consumer products and devices, packaging, signage, and transportation. |
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