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NITRIDE SEMICONDUCTOR LASER ELEMENT 发明申请

2023-01-04 3680 77K 0

专利信息

申请日期 2025-07-11 申请号 JP2006260631
公开(公告)号 JP2008084939A 公开(公告)日 2008-04-10
公开国别 JP 申请人省市代码 全国
申请人 ROHM CO LTD
简介 PROBLEM TO BE SOLVED : To provide a small-sized green color semiconductor laser element of compact design that has been realized using a single chip. SOLUTION : In a nitride semiconductor laser element, a photonic crystal region 21 and a rare earth doped region 22 are formed within an InGaN active layer 14. The photonic crystal region 21 and rare earth doped region in the active layer 14 are formed adjacently in each other along one front surface. The photonic crystal region 21 is formed as a first pattern along one front surface of the active layer 14 and includes a plurality of grooves 23 arranged in parallel keeping an interval in accordance with the wavelength of the excited laser beam. The rare earth doped region 22 includes, as a second pattern, a plurality of grooves 24 arranged in parallel keeping an interval in accordance with the wavelength of the output green laser beam. COPYRIGHT : (C)2008, JPO&INPIT


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