| 简介 |
A semiconductor device containing a substrate, a nitrided high-k film on the substrate, where the nitrided high-k film contains an oxygen-containing film, and a nitrogen-containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. According to one embodiment, the high-k film can optionally further contain aluminum, silicon, or aluminum and silicon. The semiconductor device can contain a transistor, a deep trench capacitor, or a stacked capacitor. |
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