| 申请日期 | 2025-06-29 | 申请号 | US11910306 |
| 公开（公告）号 | US20080081013A1 | 公开（公告）日 | 2008-04-03 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Tsuguo Fududa; Akira Yoshikawa; Hiroki Sato | ||
| 简介 | A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C., having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5−xAlxSiO14 (wherein RE represents a rare earth, and 0 | ||
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