| 申请日期 | 2025-08-25 | 申请号 | US11893277 |
| 公开（公告）号 | US20080057196A1 | 公开（公告）日 | 2008-03-06 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Tetsushi Ishikawa; Tsuyoshi Fujita; Osamu Nakamura | ||
| 简介 | Disclosed is a reaction device that includes a metal substrate and an R2O3 film. The R2O3 film has a crystal structure structured with at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu. The R2O3 film is formed on at least a portion of a surface of the metal substrate where an insulation property is needed. | ||
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