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METHOD FOR MANUFACTURING THIN FILM OF CRYSTALLIZED METAL OXIDE AND ITS USE 发明申请

2023-10-18 4930 67K 0

专利信息

申请日期 2026-04-01 申请号 JP2006219834
公开(公告)号 JP2008044803A 公开(公告)日 2008-02-28
公开国别 JP 申请人省市代码 全国
申请人 NAT INST OF ADV IND TECHNOL
简介 PROBLEM TO BE SOLVED : To provide a method for manufacturing a thin film of a crystallized metal oxide, namely, a high-performance phosphor thin-film material, by which the thin film containing crystallized Y2O3 can be deposited on a glass or silicon substrate. SOLUTION : The method for manufacturing the thin film of the crystallized metal oxide comprises a step of crystallizing an organometallic thin film or metal oxide film, which is deposited on the substrate and contains at least one rare earth metal element selected from the group consisting of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu, while keeping the temperature of the organometallic thin film or metal oxide film at 250-600°C and while irradiating the organometallic thin film or metal oxide film with ultraviolet light having ≤200 nm wavelength. COPYRIGHT : (C)2008, JPO&INPIT


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