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THIN FILM, LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THIN FILM 发明申请

2023-10-22 2470 103K 0

专利信息

申请日期 2025-07-05 申请号 JP2006223704
公开(公告)号 JP2008045073A 公开(公告)日 2008-02-28
公开国别 JP 申请人省市代码 全国
申请人 UNIV MEIJI
简介 PROBLEM TO BE SOLVED : To provide a new thin film formed on a substrate, a new light emitting element having the thin film as a constituent element, and a new method for producing the thin film involving forming the thin film on the substrate. SOLUTION : The thin film is formed on the substrate. The thin film contains a rare earth element in a base material. The base material preferably comprises one kind or a combination of two or more kinds selected from the group consisting of AlN, GaN, AlGaAs, SiC, InGaN and InGaAs as the constituent components. The rare earth element is preferably Er. A high-frequency magnetron spattering method can be adopted as the method for producing the thin film. The thin film is formed on the substrate 1 by putting a chip 3 on a target 2, and applying a voltage between the target 2 and the substrate 1. The substrate having the thin film formed thereon can be utilized as a constituent element of the light-emitting element. COPYRIGHT : (C)2008, JPO&INPIT


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