| 简介 |
PROBLEM TO BE SOLVED : To provide a technique for manufacturing an insulating layer with fine dielectric strength, and a technique for manufacturing a semiconductor device having an insulating layer with fine dielectric strength.
SOLUTION : A semiconductor layer or semiconductor substrate that is mainly made of a silicon is subjected to a high-density plasma treatment to form an insulating layer on the surface of the semiconductor layer or on the upper surface of the semiconductor substrate. During the high-density plasma treatment, a supply gas is changed from a gas containing a rare gas, oxygen, and hydrogen to a gas containing a rare gas and oxygen to continue the treatment.
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