| 申请日期 | 2025-07-10 | 申请号 | US11509129 |
| 公开（公告）号 | US20080047482A1 | 公开（公告）日 | 2008-02-28 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | VENKATARAMANI VENKAT SUBRAMANI | ||
| 简介 | A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material. | ||
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