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Single crystal scintillator materials and methods for making the same 发明申请

2023-03-03 2380 1005K 0

专利信息

申请日期 2025-07-10 申请号 US11509129
公开(公告)号 US20080047482A1 公开(公告)日 2008-02-28
公开国别 US 申请人省市代码 全国
申请人 VENKATARAMANI VENKAT SUBRAMANI
简介 A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.


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