| 简介 |
PROBLEM TO BE SOLVED : To form a combined vapor deposited film with one electron gun without causing the deviation of a composition by using a material composed of a formed body consisting essentially of aluminum oxide and silicon nitride or aluminum oxide and silicon carbide. SOLUTION : The material for vapor deposition is composed preferably of the formed body consisting essentially of aluminum oxide and silicon nitride or aluminum oxide and silicon carbide and contains silicon oxide and an oxide except the silicon oxide. The oxide except silicon oxide is preferably one of or a mixture of >=2 kinds of the oxide of an alkali metal, the oxide of an alkaline earth metal, the oxide of rare earth metal or the oxide except silicon oxide is preferably magnesium oxide. The formed body is preferably a sintered compact of a powdery mixture consisting essentially of aluminum oxide powder and silicon nitride powder or aluminum oxide powder and silicon carbide powder and a combined ceramic thin film forming method is preferably an electron beam vapor deposition method. |
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