| 简介 |
PROBLEM TO BE SOLVED : To provide a reliable storage element stably holding information stored by utilizing a change in the resistance state of a thin film for storage included in a storage layer.
SOLUTION : The storage layer 6 is sandwiched between first and second electrodes 1, 5. In the storage layer 6, an insulating layer 2 of which thermal conductivity is not less than 15 W/mK, a thin film 3 for storage made of rare earth element oxide, and an ion source layer 4 containing Cu, Ag, or Zn to be ionized are laminated. In the storage element 10, the storage layer 6 is connected to one electrode 1 through an opening formed in the insulating layer 2.
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