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Broadband erbium doped fiber amplifier 发明授权

2023-02-21 2150 63K 0

专利信息

申请日期 2025-06-30 申请号 JP2001380556
公开(公告)号 JP4046506B2 公开(公告)日 2008-02-13
公开国别 JP 申请人省市代码 全国
申请人 Samsung Electronics Co Ltd
简介 The proposed amplifier structure and associated method of optical signal amplification efficiently utilizes the limited length of rare earth-doped optical amplifier. A multi-stage of amplification stages, which includes a first erbium-doped fiber amplifier stage pumped by a first pump light source and a second erbium-doped fiber amplifier stage pumped by a second pump light source, is provided and includes a split section disposed between the first and second amplification stages for splitting the amplified signal light into a C-band and a L-band; a reflector for reflecting the amplified output of the second amplifier stage back into the second amplifier stage and the first amplifier stage in a reverse direction; a combiner for combining the reflected output, in succession, from the second amplifier and first amplifier to produce an output signal; and, a circulator for redirecting the reflected output traveling in a reverse direction to the input of the combiner.


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