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A metallic resistance material, and resistive thin film sputtering target 发明授权

2023-03-04 3480 79K 0

专利信息

申请日期 2025-07-17 申请号 JP2004102656
公开(公告)号 JP4042714B2 公开(公告)日 2008-02-06
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO METAL MINING CO
简介 PROBLEM TO BE SOLVED : To provide a resistance thin film having high high temperature stability and satisfactory resistance temperature properties which have not been realized by the conventional Ni-Cr-Al-Si alloy, to provide a metal resistor material for obtaining the resistance thin film, and to provide a sputtering target. SOLUTION : A metal resistor material having a composition comprising, by mass, 5 to 15% Al, 0.2 to 5.0% Si and 0.01 to 0.5% rare earth elements, and the balance Cr and Ni, and in which the ratio of Cr/Ni is 0.75 to 1.1 by mass is used for a sputtering target to deposit a resistance thin film on a substrate, and further, the resistance thin film is heat-treated, thus the metal resistor material having high high temperature stability and satisfactory resistance temperature properties can be obtained. COPYRIGHT : (C)2006, JPO&NCIPI


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