| 申请日期 | 2026-04-22 | 申请号 | US11869593 |
| 公开（公告）号 | US20080025082A1 | 公开（公告）日 | 2008-01-31 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | SUN JONATHAN Z; PARKIN STUART S P | ||
| 简介 | A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers. | ||
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