| 简介 |
PROBLEM TO BE SOLVED : To provide etching with good controllability of patterning an oxide including at least one of a rare earth element and a Group II element in manufacturing a semiconductor device having the oxide including at least the one of the rare earth element and the Group II element.
SOLUTION : A method for manufacturing a semiconductor device having a gate insulative film 15 and a semiconductor layer 12 comprises : a first step of forming the gate insulative film; and a second step of forming the semiconductor layer. Out of the first and second steps, at least one step includes the step of forming the oxide including at least one of a rare earth element and a Group II element. Out of the first and second steps, at least one step includes the step of etching by reactive gas. In the etching step, the oxide is at least partially etched.
SELECTED DRAWING : Figure 6
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