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SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 发明申请

2023-10-19 3670 159K 0

专利信息

申请日期 2025-07-12 申请号 JP2007002923
公开(公告)号 JP2008010816A 公开(公告)日 2008-01-17
公开国别 JP 申请人省市代码 全国
申请人 ROHM CO LTD
简介 PROBLEM TO BE SOLVED : To provide a semiconductor light-emitting element and manufacturing method thereof in which laser light of a desired wavelength in green or the like can be emitted without reducing hole and electron injection efficiency. SOLUTION : The present invention relates to a semiconductor light-emitting element A1 comprising a laser diode section 2A which includes an n-type semiconductor layer 3A, active layer 4A and p-type semiconductor layer 5A composed of group III nitride semiconductors and in which laser light is emitted from the active layer 4A vertically to a laminating direction of the n-type semiconductor layer 3A, the active layer 4A and the p-type semiconductor layer 5A. The semiconductor light-emitting element further comprises a wavelength converting section 2B which is disposed in a light emitting direction with respect to the laser diode section 2A and composed of a group III nitride semiconductor at least partially added with rare earth elements. COPYRIGHT : (C)2008, JPO&INPIT


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