| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor light-emitting element and manufacturing method thereof in which laser light of a desired wavelength in green or the like can be emitted without reducing hole and electron injection efficiency.
SOLUTION : The present invention relates to a semiconductor light-emitting element A1 comprising a laser diode section 2A which includes an n-type semiconductor layer 3A, active layer 4A and p-type semiconductor layer 5A composed of group III nitride semiconductors and in which laser light is emitted from the active layer 4A vertically to a laminating direction of the n-type semiconductor layer 3A, the active layer 4A and the p-type semiconductor layer 5A. The semiconductor light-emitting element further comprises a wavelength converting section 2B which is disposed in a light emitting direction with respect to the laser diode section 2A and composed of a group III nitride semiconductor at least partially added with rare earth elements.
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