| 简介 |
PROBLEM TO BE SOLVED : To provide a silicon optical integrated circuit that is finer in construction and lower in cost by forming a core consisting of silicon and a light-emitting portion monolithically on the same substrate. SOLUTION : A silicon oxide film 107 is formed so that it may cover a region of the core 103 which is not at least covered by a clad 106, and a rare-earth element is added by e.g. an ion implanting method, to a region which directly comes into contact with at least the core 103 of the silicon oxide film 107. The silicon oxide film 107 to which the rare-earth element is added becomes the light-emitting portion, then a metal film is formed on the silicon oxide film 107 at the region of the core 103 not covered by the clad 106 to obtain an electrode 110. COPYRIGHT : (C)2005, JPO&NCIPI |
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