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Glass Compositions for Low Temperature Sintering, Glass Frit, Dielectric Compositions and Multilay 发明授权

2023-01-25 4600 426K 0

专利信息

申请日期 2025-07-07 申请号 KR1020060088926
公开(公告)号 KR100790682B1 公开(公告)日 2007-12-24
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG ELECTRO MECHANICS CO LTD
简介 PURPOSE : A glass composition for low temperature sintering, a glass frit, a dielectric composition comprising the glass composition and a multilayer ceramic capacitor comprising the dielectric composition are provided to sinter BaTiO3 dielectric layer at low temperature for minimizing short-cut generating rate and for maximizing stability sufficient for satisfying X5R dielectric property by decreasing the difference of sinter shrinking between inner electrode layer and dielectric layer. CONSTITUTION : The glass composition for low temperature sintering consists of aR2O-bMO-cMF2-dB2O3-eSiO2, wherein a, b, c, d and e satisfy the relations of 2<=a<=10, 0<=b<=30, 1<=c<=5, 10<=d<=30, 50<=e<=80 and a+b+c+d+e=100mol%%, R2O is at least one selected from Li2O and K2O, MO is at least one selected from CaO and BaO, and MF2 is at least one selected from CaF2 and BaF2. The glass frit for low temperature sintering which comprises the glass composition is spherical and the frit has average particle size of 100-200nm. The dielectric composition comprises 1.0-3.0 mol of the glass composition together with accessory ingredient which comprises 0.5-2.0 mol of MgO, 0.1-2.0 mols of oxide of rare-earth element(at least one selected from a group consisting of Y2O3, Ho2O3 and Dy2O3), 0.05-0.5 mol of MnO and 0.05-0.5 mol of V2O5 with respect to 100 mol of BaTiO3. The multilayer ceramic capacitor comprises a number of dielectric layers, inner electrode between the dielectric layers and outer electrode which is electronically connected to the inner electrode, wherein the dielectric layer consists of the dielectric composition. © KIPO 2008


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