| 申请日期 | 2026-04-28 | 申请号 | EP06730692 |
| 公开（公告）号 | EP1867761A1 | 公开（公告）日 | 2007-12-19 |
| 公开国别 | EP | 申请人省市代码 | 全国 |
| 申请人 | Fukuda Crystal Laboratory | ||
| 简介 | It is an object of the present invention to provide a material for a piezoelectric device used at a high temperature zone, which can be used at the high temperature zone exceeding 400°C and has a resistivity whose temperature dependence is low. The material is characterized by having a composition selected from the group consisting of RE3Ga5-xAlxSiO14 (wherein RE represents a rare earth, and 0 | ||
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