| 简介 |
PROBLEM TO BE SOLVED : To provide a plasma processing apparatus for stably conducting fine processes to a sample to be processed for a long period, taking uniformity of etching rate into consideration.
SOLUTION : The plasma processing apparatus is provided with a susceptor 236 for protecting a holding stage 209 arranged within a processing chamber 200 in order to conduct plasma process of wafer placed on a holding stage with generation of plasma. In this plasma processing apparatus, at least the front surface just located under the end of wafer or the front surface in contact with plasma of the susceptor is covered with a plasma-proof material formed of the material not including oxygen, for example, a fluoride of a rare earth element such as YF3 or the like or a mixed material of such fluorides.
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