| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method capable of reducing and stabilizing an insertion loss of a magnetic garnet. SOLUTION : In the manufacturing method of a bismuth-substituted rare earth iron garnet thick film single crystal represented by the formula (R, Bi)3(Fe, M)5O12(wherein R is at least one kind selected among Eu, Gd, Ho, Yb and Y, and M is Al, Ga or both and its amount may be zero) and grown on a single crystal substrate by a liquid phase epitaxial growing method, a molten liquid obtained by dissolving a raw material of the bismuth-substituted rare earth iron garnet thick film single crystal to a molten material consisting of PbO-Bi2O3-B2O3is agitated at a holding step of about 1, 000°C and a temperature falling step to a thick film growing temperature of 760-780°C, then the thick film single crystal is grown. COPYRIGHT : (C)2008, JPO&INPIT |
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