| 简介 |
PROBLEM TO BE SOLVED : To provide a controlled forming method for a gate dielectric stack.
SOLUTION : A dielectric material layer is formed on a semiconductor substrate. Then, a rare earth oxide layer is deposited on the dielectric layer. After that, a metal gate electrode material is deposited on the rare earth oxide layer, and a rare earth silicate layer is formed by performing anealing. However, an annealing process is not performed before depositing the metal electrode material.
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