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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 发明申请

2023-12-01 1630 1053K 0

专利信息

申请日期 2025-07-11 申请号 US11933845
公开(公告)号 US20080203498A1 公开(公告)日 2008-08-28
公开国别 US 申请人省市代码 全国
申请人 Mariko TAKAYANAGI
简介 In one aspect of the present invention, a semiconductor device may include a semiconductor substrate; a first gate dielectric layer provided on the semiconductor substrate, the relative dielectric constant ratio of the first gate dielectric layer being no less than 8; a second gate dielectric layer provided on the semiconductor substrate, the relative dielectric constant ratio of the second gate dielectric layer being no less than 8; a first gate electrode provided on the first gate dielectric layer and made of germanide which is a metallic compound containing a metal element of a rare earth metal; and a second gate electrode provided on the second gate dielectric layer and made of silicide which is a metallic compound containing the same metal element of a rare earth metal as the germanide in the first gate electrode.


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