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LIGHT AMPLIFIER AND METHOD FOR MANUFACTURING THE SAME 发明申请

2023-03-25 1440 1460K 0

专利信息

申请日期 2025-06-28 申请号 WOJP08051828
公开(公告)号 WO2008096733A1 公开(公告)日 2008-08-14
公开国别 WO 申请人省市代码 全国
申请人 EpiPhotonics Inc; NASHIMOTO Keiichi; SUGAHARA Yoshiyuki
简介 Disclosed is a small-sized, highly efficient light amplifier having a PLZT optical waveguide layer to which a rare earth element is added. Also disclosed is a method for manufacturing such a light amplifier. Specifically disclosed is a light amplifier characterized by having an optical waveguide layer which contains Pb1-xLax(ZryTi1-y)1-x/4O3 (PLZT : 0 < x < 0.3, 0 < y < 1.0). This light amplifier is further characterized in that the optical waveguide layer is composed of a single crystal film which is formed by epitaxial growth and doped with Yb (ytterbium) in an amount of not less than 0.2% by mole but not more than 11.0% by mole.


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