客服热线:18202992950

The voltage dependent resistor 发明授权

2023-09-02 1370 177K 0

专利信息

申请日期 2025-07-09 申请号 JP2003032637
公开(公告)号 JP4123957B2 公开(公告)日 2008-07-23
公开国别 JP 申请人省市代码 全国
申请人 Murata Manufacturing Co Ltd6231
简介 A voltage-dependent resistor includes a composite of at least one semiconductive ceramic layer mainly containing ZnO and at least one metal oxide layer containing at least one of strontium and barium, at least one of manganese and cobalt, and at least one rare earth element. The material for the at least one metal oxide layer is represented by the general formula M1-xAxBO3 where M indicates the at least one rare earth element; A indicates the at least one of strontium and barium; B indicates the at least one of manganese and cobalt; and x<=0.4. The at least one semiconductive ceramic layer, which is an n-type semiconductor, is doped with a trivalent dopant. The total number of the at least one semiconductive ceramic layer and the at least one metal oxide layer is at least three.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4