| 简介 |
PROBLEM TO BE SOLVED : To provide a thin-film transistor that is superior in mass productivity, and to provide a semiconductor thin-film that is useful in semiconductor manufacturing.
SOLUTION : A semiconductor film containing rare gas elements of from 1×1020/cm3 to 1×1021/cm3 produced by a plasma CVD method is formed, and an active layer is formed by removing a part of the semiconductor film, to form a top gate thin-film transistor or a bottom gate thin-film transistor. Furthermore, a semiconductor device that uses the semiconductor film containing the rare gas elements of 1×1020/cm3 to 1×1021/cm3, produced by a plasma CVD method, as a peeling layer is manufactured. Furthermore, a semiconductor device that uses the semiconductor film, containing the rare gas elements of 1×1020/cm3 to 1×1021/cm3, produced by a plasma CVD method as a gettering site is manufactured.
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