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SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR 发明申请

2023-09-03 4040 306K 0

专利信息

申请日期 2025-07-10 申请号 JP2008004408
公开(公告)号 JP2008166828A 公开(公告)日 2008-07-17
公开国别 JP 申请人省市代码 全国
申请人 SEMICONDUCTOR ENERGY LAB
简介 PROBLEM TO BE SOLVED : To provide a thin-film transistor that is superior in mass productivity, and to provide a semiconductor thin-film that is useful in semiconductor manufacturing. SOLUTION : A semiconductor film containing rare gas elements of from 1×1020/cm3 to 1×1021/cm3 produced by a plasma CVD method is formed, and an active layer is formed by removing a part of the semiconductor film, to form a top gate thin-film transistor or a bottom gate thin-film transistor. Furthermore, a semiconductor device that uses the semiconductor film containing the rare gas elements of 1×1020/cm3 to 1×1021/cm3, produced by a plasma CVD method, as a peeling layer is manufactured. Furthermore, a semiconductor device that uses the semiconductor film, containing the rare gas elements of 1×1020/cm3 to 1×1021/cm3, produced by a plasma CVD method as a gettering site is manufactured. COPYRIGHT : (C)2008, JPO&INPIT


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