申请日期 | 2025-07-11 | 申请号 | DE102007047857 |
公开(公告)号 | DE102007047857A1 | 公开(公告)日 | 2008-07-10 |
公开国别 | DE | 申请人省市代码 | 全国 |
申请人 | QIMONDA NORTH AMERICA CORP | ||
简介 | Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer. |
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