| 申请日期 | 2025-07-11 | 申请号 | DE102007047857 |
| 公开（公告）号 | DE102007047857A1 | 公开（公告）日 | 2008-07-10 |
| 公开国别 | DE | 申请人省市代码 | 全国 |
| 申请人 | QIMONDA NORTH AMERICA CORP | ||
| 简介 | Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
