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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 发明申请

2023-04-04 2150 209K 0

专利信息

申请日期 2025-07-20 申请号 JP2006343717
公开(公告)号 JP2008159645A 公开(公告)日 2008-07-10
公开国别 JP 申请人省市代码 全国
申请人 RENESAS TECH CORP
简介 PROBLEM TO BE SOLVED : To provide a technology for improving operation life of a quarts component forming a plasma etching apparatus. SOLUTION : Fig. 5 is a graph showing a degree of consumption by the etching gas of a shield ring for insulating the circumference of an upper electrode of the plasma etching apparatus. The horizontal axis of Fig. 5 indicates a distance a from the internal circumference of the concentrically formed shield ring, while the vertical axis shows a thickness b of the shield ring. A solid line (1) indicates an example where only quartz is used as a material of the shield ring, while a solid line (2) indicates an example where aluminum and rare-earth metal are added to quartz as materials of the shield ring. The solid line (1) and the solid line (2) show states after an elapse of the operation period of 300 hours. A broken line (3) shows the shield ring before use. COPYRIGHT : (C)2008, JPO&INPIT


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