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Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same 发明申请

2023-09-03 2350 676K 0

专利信息

申请日期 2025-07-11 申请号 US11582275
公开(公告)号 US20080164569A1 公开(公告)日 2008-07-10
公开国别 US 申请人省市代码 全国
申请人 Tingkai Li; Wei Gao; Yoshi Ono; Sheng Teng Hsu
简介 A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.


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