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N-Doped Semiconducting Material Comprising Polar Matrix and Metal Dopant 发明申请

2023-10-10 1460 1991K 0

专利信息

申请日期 2026-03-10 申请号 US15739143
公开(公告)号 US20190036032A1 公开(公告)日 2019-01-31
公开国别 US 申请人省市代码 全国
申请人 Novaled GmbH
简介 The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.


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