| 简介 |
PURPOSE : A method for forming a metal layer pattern and a method for forming a gate electrode of a semiconductor device by using the same are provided to prevent loss of a metal layer by forming an etch-stop layer having high etch selectivity between the metal layer and a hard mask.
CONSTITUTION : A metal layer is formed on a semiconductor substrate(10). An etch-stop layer(14) is formed on the semiconductor substrate including the metal layer. A hard mask is formed on the etch-stop layer. A hard mask pattern(15A) is formed by etching selectively the hard mask, in order to expose the etch-stop layer. The etch-stop layer and the metal layer are etched by using the hard mask pattern as an etch mask. The metal layer is composed of a transition metal or a rare-earth metal. The etch-stop layer has etch selectivity higher than the etch selectivity of the hard mask in order to prevent an etching effect thereof in a mask pattern forming process.
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