| 简介 |
The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce3+-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce3+-ions is energetically higher than an upper lasing state of the ions of the further rare-earth material. This laser can be optically pumped by GaN laser diodes (4) in the wavelength region between 400 and 450 nm and emits laser radiation in the visible wavelength range. With this laser, in particular, a GaN diode laser pumped solid-state laser emitting in the green wavelength region can be realized. |
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