| 申请日期 | 2025-06-25 | 申请号 | US11254031 |
| 公开（公告）号 | US7384481B2 | 公开（公告）日 | 2008-06-10 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Petar Atanackovic | ||
| 简介 | Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits. | ||
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