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MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SOLAR CELL, AND THE CELL 发明申请

2023-12-20 3750 86K 0

专利信息

申请日期 2025-07-16 申请号 JP2006317563
公开(公告)号 JP2008131002A 公开(公告)日 2008-06-05
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a light-confined single-crystal silicon solar cell having a thin light conversion layer, made of high crystallinity single-crystal silicon. SOLUTION : A manufacturing method of the single-crystal silicon solar cell includes a step of injecting hydrogen ions or rare gas ions to a single-crystal silicon substrate, a step of surface-activating at least one of an ion implanted plane of the silicon substrate and a plane of a transparent insulating substrate, a step of pasting the ion implanted plane of the silicon substrate and the transparent insulating substrate, with their planes being subjected to surface activation as pasted planes, a step of applying shocks to the ion implanted layer to mechanically delaminate the single-crystal silicon substrate for turning into a single-crystal silicon layer, a step of forming a plurality of diffusion regions of second conductivity type, on the delaminated surface of the single-crystal silicon layer so that a plurality of regions of a first conductivity type and a plurality of regions of the second conductivity type exist on the delaminated plane of the single-crystal silicon layer, and a step of forming a light reflecting film, covering the plurality of regions of the first and second conductivity types. COPYRIGHT : (C)2008, JPO&INPIT


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