| 简介 |
PURPOSE : A non-volatile semiconductor memory device and a manufacturing method thereof are provided to solve a crystallization problem caused when a rare earth oxide is used as an inter-electrode dielectric or a blocking dielectric.
CONSTITUTION : A non-volatile semiconductor memory device includes a tunnel insulating layer, a floating gate electrode, an interface opposite to the floating gate electrode, an inter-electrode dielectric(12) defining the interface into a first interface and a second interface, and a control gate electrode. The inter-electrode dielectric includes first elements selected from rare earth elements, second elements selected from the group consisting of Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first elements is varied between the first interface and the second interface. A composition ratio of the first elements around the first interface is lower that of the first elements around the second interface.
© KIPO 2008 |
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