| 简介 |
PURPOSE : An Al-based alloy sputtering target is provided to increase deposition rate and effectively suppress sputtering defects by sufficiently controlling crystallographic orientation in the vertical line direction of a sputtering surface, and a process for producing the Al-based alloy sputtering target is provided.
CONSTITUTION : As an Al-based alloy sputtering target containing 0.05 to 10 atomic percent of Ni, the Al-based alloy sputtering target satisfies : (1) a required condition in which a ratio of the numeric P value to a total area of the sputtering surface is at least 70%%; (2) a required condition in which a ratio of an area fraction of ±15° to the numeric P value is at least 30%%; and (3) a required condition in which a ratio of an area fraction of ±15° to the numeric P value is not more than 10%%, when crystallographic orientations , , and in the vertical line direction are observed on a sputtering surface of the Al-based alloy sputtering target by electron backscatter diffraction pattern method, and a numeric P value denotes a total area fraction of ±15°, ±15°, ±15° and ±15°. The Al-based alloy sputtering target further contains 0.1 to 2 atomic percent of a rare earth element.
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