客服热线:18202992950

SINGLE CRYSTAL SILICON SOLAR CELL AND PROCESS FOR MANUFACTURING SAME 发明申请

2023-08-15 4510 84K 0

专利信息

申请日期 2025-08-18 申请号 JP2006294490
公开(公告)号 JP2008112840A 公开(公告)日 2008-05-15
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a single crystal silicon solar cell employing high-crystallinity single crystal silicon in a thin film light conversion layer as a see-through type solar cell. SOLUTION : The process for manufacturing a single crystal silicon solar cell comprises a step for injecting hydrogen ions or rare gas ions into a single crystal silicon substrate, a step for sticking the single crystal silicon substrate to a transparent insulating substrate through a transparent adhesive with the ion injection surface as the sticking surface, a step for hardening the transparent adhesive, a step for stripping the single crystal silicon substrate mechanically by applying an impact to the ion injection layer thus obtaining a single crystal silicon layer, a step for forming a plurality of second conductivity type diffusion regions on the stripping surface side of the single crystal silicon layer such that a plurality of first conductivity type diffusion regions and a plurality of second conductivity type diffusion regions exist on the stripping surface side of the single crystal silicon layer, a step for forming a plurality of individual electrodes on the plurality of first conductivity type diffusion regions and second conductivity type diffusion regions, respectively, and a step for forming current collection electrodes, respectively. COPYRIGHT : (C)2008, JPO&INPIT


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4