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PROCESS FOR MANUFACTURING SINGLE CRYSTAL SILICON SOLAR CELL AND SINGLE CRYSTAL SILICON SOLAR CELL 发明申请

2023-04-26 1430 84K 0

专利信息

申请日期 2025-07-15 申请号 JP2006294608
公开(公告)号 JP2008112848A 公开(公告)日 2008-05-15
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a single crystal silicon solar cell employing high-crystallinity single crystal silicon in a thin film light conversion layer as a see-through type solar cell. SOLUTION : The process for manufacturing a single crystal silicon solar cell comprises a step for injecting hydrogen ions or rare gas ions into a single crystal silicon substrate 11, a step for performing surface activation at least of the ion injection surface of the single crystal silicon substrate 11 and the surface of a transparent insulating substrate, a step for sticking the ion injection surface of the single crystal silicon substrate and the surface of the transparent insulating substrate with the surface subjected to surface activation as the sticking surface, a step for stripping the single crystal silicon substrate mechanically by applying an impact to the ion injection layer 13 thus obtaining a single crystal silicon layer, and a step for forming a plurality of second conductivity type diffusion regions on the stripping surface side of the single crystal silicon layer such that a plurality of first conductivity type regions and second conductivity type regions exist on the stripping surface side of the single crystal silicon layer. COPYRIGHT : (C)2008, JPO&INPIT


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