| 申请日期 | 2025-06-24 | 申请号 | JP2008024589 |
| 公开（公告）号 | JP2008113052A | 公开（公告）日 | 2008-05-15 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | FUJIFILM CORP | ||
| 简介 | PROBLEM TO BE SOLVED : To realize a larger number of oscillation wavelengths in a laser diode excitation solid laser to generate a laser beam by exciting a solid laser crystal doped with a rare earth element ion by a laser diode. SOLUTION : A solid laser crystal 13 doped with Er3+ is excited by a GaN type laser diode 11. A solid laser beam 16 is generated by transition 4S3/2→4I15/2 or 2H9/2→4I13/2 in the solid laser crystal 13. COPYRIGHT : (C)2008, JPO&INPIT | ||
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