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A change in resistance element and a non-volatile memory using the same 发明申请

2023-03-28 4700 891K 0

专利信息

申请日期 2025-06-26 申请号 JP2006535170
公开(公告)号 JPWO2006030814A1 公开(公告)日 2008-05-15
公开国别 JP 申请人省市代码 全国
申请人 F HOFFMANN LA ROCHE CO AG
简介 A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including : (1) a first electrode production step; (2) a step of forming the material layer on the first electrode, wherein the material layer comprises an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3, wherein R is a rare-earth element and M is an alkaline-earth element; (3) an oxygen treatment step of heating the material layer in an oxygen atmosphere; (4) a step of forming the second electrode on the material layer that was subjected to the oxygen treatment step; and (5) a hydrogen treatment step of heating the material layer in a reducing atmosphere containing hydrogen.


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