| 简介 |
There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of : implanting at least one of hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film, to bond the single crystal silicon substrate and the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like. |
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