| 简介 |
Physically a film is formed R element 28 ∼ 45 mass % of (stage, R a rare earth lanthanum an element of group 1 one or at least one 2) in based alloy including R-Fe-B a, crystal grain diameter 0.5 ∼ 30 micro m in R 2 Fe 14 B elements R at the boundary between a wire section of the decision of a group IV semiconductor and a sub ([...] , enrichment) R-Fe-B having composite structure with grains of a magnet-based thin film. Been improved tightly the introspection of sheet magnet. Physical film forming during or/and then a is formed with one, 700 ∼ 1200 °C heating a grain growth according to a sub elements R and forming is ensured by mouth summing up R-Fe-B-based thin film magnet can be produced. |
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