| 简介 |
PROBLEM TO BE SOLVED : To provide a PMOS transistor using a high-dielectric-constant film for a gate insulating film thereby allowing the power consumption thereof to be reduced.
SOLUTION : The PMOS transistor includes : a semiconductor substrate 1; a P-type impurity diffusion layer 3 formed so as to sandwich a channel region 2 on the surface part of the semiconductor substrate 1; a gate insulating film 4 having insulating films 4a and 4b which are formed on the channel region 2 and contain hafnium or zirconium and a rare-earth element or a group II element, and a silicon oxide film 4c formed on the insulating films 4a and 4b; and a gate electrode 5 formed on the gate insulating film 4.
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