| 简介 |
PROBLEM TO BE SOLVED : To provide a rare earth element added semiconductor laminate structure for a light emitting device in which luminosity of rare earth element is high and light emission wavelength does not fluctuate depending on the temperature.
SOLUTION : The rare earth added semiconductor laminate structure 1 for a light emitting device has the separate confinement structure in which p-type and n-type clad layers 4 and 5 with forbidden band width larger than an optical guide layer 3 are laminated on both sides of a structure having an active layer 2 and the optical guide layer 3 having a film thickness nearly equal to a carrier diffusion length, and where the active layer 2 is added with rare earth element or both rare earth element and oxygen. The active layer 2 may be arranged having the film thickness nearly equal to the carrier diffusion length, or divided and arranged in the center of the optical guide layer.
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