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Nonvolatile Memory Element 发明申请

2023-03-03 3380 243K 0

专利信息

申请日期 2025-07-08 申请号 US11886776
公开(公告)号 US20090050868A1 公开(公告)日 2009-02-26
公开国别 US 申请人省市代码 全国
申请人 SAWA AKIHITO; FUJII TAKESHI; KAWASAKI MASASHI; TOKURA YOSHINORI
简介 Provided is a material composition which allows a nonvolatile memory element made of a perovskite-type transition metal oxide having the CER effect to be formed of three elements, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode and a rare earth-copper oxide comprising one type of rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.


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