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Article comprising a thick garnet film with negative growth-induced anisotropy 发明申请

2023-01-03 1430 692K 0

专利信息

申请日期 2025-07-08 申请号 US10986985
公开(公告)号 US20090053558A1 公开(公告)日 2009-02-26
公开国别 US 申请人省市代码 全国
申请人 Robert R Abbott; Vincent J Fratello; Steven Joy Licht; Irina Mnushkina
简介 A thick film bismuth doped rare earth iron garnet greater than 50 μm in thickness with a growth-induced uniaxial anisotropy less than zero, such that all the magnetic domains in the film have their magnetization vectors in the plane of the film. A preferred embodiment comprises a film of composition Bi1.13Gd1.36Lu0.51Fe4.55Ga0.45O12. Films with such anisotropy solve the problem of devices and sensors that require a continuously varying Faraday rotation without the effective insertion losses that are inherent to discrete perpendicular domains. A similar effect can be achieved with a film of perpendicular domains by launching the light in the plane of the thick film in a non-waveguiding mode as opposed to the conventional perpendicular direction.


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