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PHOTOMASK, AND METHOD FOR MANUFACTURING THE SAME 发明申请

2023-08-10 3260 62K 0

专利信息

申请日期 2025-08-15 申请号 JP2007183196
公开(公告)号 JP2009020333A 公开(公告)日 2009-01-29
公开国别 JP 申请人省市代码 全国
申请人 CANON KK
简介 PROBLEM TO BE SOLVED : To provide a photomask having a new structure, which has a high contrast of transfer pattern to exposing beam, and is reduced in manufacturing cost by omitting developing step in a transfer pattern forming process, and also to provide a method for manufacturing the same. SOLUTION : The method for manufacturing a photomask including a transfer pattern formed on an inorganic resist layer formed on one surface of a transparent substrate comprises steps of : forming the inorganic resist layer including a first reaction layer formed of a rare earth metal and a second reaction layer formed of a hydrogen-containing dielectric material which makes contact with the first reaction layer; irradiating the inorganic resist layer with energy beam; desorbing hydrogen from the second reaction layer in the area irradiated with the energy beam; and reducing the first reaction layer with the desorbed hydrogen into a hydride. COPYRIGHT : (C)2009, JPO&INPIT


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