| 简介 |
PROBLEM TO BE SOLVED : To provide an oxide semiconductor containing GaxInyZnz oxide and a new material, and to provide a thin film transistor whose property is improved by adding the GaxInyZnz oxide and the new material as the channels of the thin film transistor, and its manufacturing method.
SOLUTION : The oxide semiconductor contains the GaxInyZnz oxide, and at least one material selected from groups consisting of a 4A-group material, oxide of the 4A-group material and a rare earth material.
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