| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming a thin film of crystalline or non-crystalline solid material selected from a dielectric material, a conducting material, a semiconductor material and an unorganized semiconductor material.
SOLUTION : The invention relates to a method for forming a thin film of crystalline or non-crystalline solid material selected from a dielectric material, a conducting material, a semiconductor material and an unorganized semiconductor material. When treating a substrate made of the solid material, the method includes an ion implantation step wherein one face of the substrate is bombarded with ions selected from rare gas and hydrogen gas ions so as to create a layer of microcavities separating the substrate into two regions at a depth neighboring the average ion penetration depth in the body of the substrate, and a heat treatment step wherein the layer of microcavities is heated to a temperature sufficient to bring about a separation between the two regions of the substrate naturally or by means of an applied stress. The method is applicable to a ferroelectric capacitor memory.
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