| 简介 |
PURPOSE : The oxide semiconductor, and thin film transistor including the same and manufacturing method thereof are provided to use the channel of the single layered or multi-layered structure as GaxInyZnz oxide.CONSTITUTION : The thin film transistor comprises the substrate(11) having the insulating layer(12), the gate isolation layer(14), the channel(15), and the souce and drain(16b). The channel is oxide semiconductor including 4A family material in the GaxInyZnz oxide semiconductor material, and 4A family oxide or the rare earth material. The 4A family material is one among Ti, and Zr or Hf. The oxide semiconductor is the TiInZn oxide or the TiGaInZn oxide.© KIPO 2009 |
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